issue 1 - january 2008 1 www.zetex.com ? zetex semiconductors plc 2008 ZXMS6001N3 60v n-channel self protected enhancement mode intellifet tm mosfet summary continuous drain source voltage v ds = 60v on-state resistance 675m ? max nominal load current (a) 1.1a (v in = 5v) min nominal load current (c) 0.7a (v in = 5v) clamping energy 550mj description low input current self protected low side mosfet intended for vin=5v applications. monolithic over temperature, over current, over voltage (active clamp) and esd protected logic level functionality. intended as a general purpose switch. note: the tab is connected to the source pin and must be electrically isolated from the drain pin. connection of significant copper to the drain pin is recommended for best thermal performance. features ? short circuit protection with auto restart over voltage protection (active clamp) thermal shutdown with auto restart over-current protection input protection (esd) load dump protection (actively protects load) low input current ordering information device package part mark reel size (inches) tape width (mm) quantity per reel ZXMS6001N3ta sot223 zxms6001 7 12 embossed 1,000 s sot223 s d in
ZXMS6001N3 issue 1 - january 2008 2 www.zetex.com ? zetex semiconductors plc 2008 functional block diagram applications and information especially suited for loads with a high in-rush current such as lamps and motors. all types of resistive, inductive and capacitive loads in switching applications. c compatible power switch for 12v and 24v dc applications. automotive rated. replaces electromechanical re lays and discrete circuits. linear mode capability - the current-limiting protecti on circuitry is designed to de-activate at low vds, in order not to compromise the load cu rrent during normal operation. the design max dc operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. this does not compromise the products ability to self protect itself at low v ds . s over voltage protection over current protection over temperature protection logic human body esd protection d in dv/dt limitation
ZXMS6001N3 issue 1 - january 2008 3 www.zetex.com ? zetex semiconductors plc 2008 absolute maximum ratings thermal resistance notes: (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 board with a high coverage of single sided 2oz weight copper. allocation of 6cm 2 copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated. (b) for a device surface mounted on fr4 board as (a) and m easured at t<=10s. (c) for a device surface mounted on fr4 board with th e minimum copper required for electrical connections. parameter symbol limit unit continuous drain-source voltage v ds 60 v drain-source voltage for short circuit protection v in = 5v v ds(sc) 36 v continuous input voltage v in -0.2 ... +10 v peak input voltage v in -0.2 ... +20 v continuous input current -0.2v=v in =10v v in <-0.2v or v in >10v i in no limit | i in | 2 ma operating temperature range t j , -40 to +150 c storage temperature range t stg -55 to +150 c power dissipation at t a =25 c (a) p d 1.5 w power dissipation at t a =25 c (c) p d 0.6 w continuous drain current @ v in =5v; t a =25 c (a) i d 1.1 a continuous drain current @ v in =5v; t a =25 c (c) i d 0.7 a continuous source current (body diode) (a) i s 2.0 a pulsed source current (body diode) (b) i s 3.3 a unclamped single puls e inductive energy e as 550 mj load dump protection v loaddump 80 v electrostatic discharge (human body model) v esd 4000 v din humidity category, din 40 040 e iec climatic category, din iec 68-1 40/150/56 parameter symbol value unit junction to ambient (a) r ja 83 c/w junction to ambient (b) r ja 45 c/w junction to ambient (c) r ja 208 c/w
ZXMS6001N3 issue 1 - january 2008 4 www.zetex.com ? zetex semiconductors plc 2008 recommended opera ting conditions the zxms6001 is optimized for use with c operating from 5v supplies. electrical characteristics (at t amb = 25c unless otherwise stated). notes: (d) recommended input voltage range over which protection circuits function as specified. (e) the drain current is limited to a reduced value when vds exceeds a safe level symbol description min max units v in input voltage range 0 6 v t a ambient temperature range -40 125 c v ih high level input voltage for mosfet (d) 46v v p peripheral supply voltage (voltage to which load is referred) 60 v parameter symbol min typ max unit conditions static characteristics drain-source clamp voltage v ds(az) 60 70 75 v i d =10ma off state drain current i dss 0.1 3 av ds =12v, v in =0v off state drain current i dss 315 av ds =32v, v in =0v input threshold voltage (d) v in(th) 11.82.5vv ds =v gs , i d =10ma input current i in 150 av in =+3v input current i in 335 500 av in =+5v, all circumstances static drain-source on-state resistance r ds(on) 12 ? v in =3v, i d =0.1a static drain-source on-state resistance r ds(on) 520 675 m ? v in =5v, i d =0.7a current limit (e) i d(lim) 11.83 av in =5v, v ds >5v dynamic characteristics turn-on time (v in to 90% i d ) t on 27 40 sr l =22 ? , v in =0 to 5v, v dd =12v turn-off time (v in to 90% i d ) t off 26 40 sr l =22 ? , v in =5v to 0v, v dd =12v slew rate on (70 to 50% v dd ) -dv ds /dt on 1.4 10 v/ sr l =22 ? , v in =0 to 5v, v dd =12v slew rate off (50 to 70% v dd ) dv ds /dt on 1.2 10 v/ sr l =22 ? , v in =5v to 0v, v dd =12v
ZXMS6001N3 issue 1 - january 2008 5 www.zetex.com ? zetex semiconductors plc 2008 f integrated protection functions are designed to prevent ic destruction under fault conditions described in the datasheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous, repetitive operation. parameter symbol min typ max unit conditions protection functions (f) minimum input voltage for over temperature protection v prot 4 3.5 v ttrip>150c maximum input voltage for over temperature protection v prot 7 6 v ttrip>150c thermal overload trip temperature t jt 150 175 c thermal hysteresis 8 c unclamped single pulse inductive energy tj=25 c e as 550 mj i d(iso) =0.7a, v dd =32v unclamped single pulse inductive energy tj=150 c e as 200 mj i d(iso) =0.7a, v dd =32v inverse diode source drain voltage v sd 1vv in =0v, -i d =1.4a 012345 0 50 100 150 200 250 300 350 v ds = 13.5v v in = 5v i in - input current (a) v in - input voltage (v) -40 -20 0 20 40 60 80 100 120 140 0 1 2 3 v in = 5v single pulse = 300s v ds = 12v current limit v temperature input current v input voltage temperature (c) id lim current limit (a)
ZXMS6001N3 issue 1 - january 2008 6 www.zetex.com ? zetex semiconductors plc 2008 application information the current-limit protection circuitry is designed to de-activate at low vds to prevent the load current from being unnecessarily restricted during normal operation. the design max dc operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see graph page 8 'typical output characteristic'). this does not compromise the products abilit y to self protect at low v ds . the overtemperature protection circuit trips at a minimum of 150c. so the available package dissipation reduces as the maximum required ambi ent temperature increase s. this leads to the following maximum recommended continuous operating currents. minimum copper area characteristics for minimum copper condition as described in note (c) max ambient temperature t a maximum continuous current v in =5v 25c at vin=5v 720 70c at vin=5v 575 85c at vin=5v 520 125c at vin=5v 320 1 10 100 1m 10m 100m 1 1ms single pulse t amb =25c r ds(on) limited 10ms 100ms 1s safe operating area i d drain current (a) v ds drain-source voltage (v) dc 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 see note (c) - minimum copper derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
ZXMS6001N3 issue 1 - january 2008 7 www.zetex.com ? zetex semiconductors plc 2008 large copper area characteristics for large copper area as described in note (a) max ambient temperature t a maximum continuous current v in =5v 25c at vin=5v 1140 70c at vin=5v 915 85c at vin=5v 825 125c at vin=5v 510 1 10 100 10m 100m 1 1ms single pulse t amb =25c r ds(on) limited 10ms 100ms 1s safe operating area i d drain current (a) v ds drain-source voltage (v) dc 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 see note (a) 6cm 2 copper derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 50 60 70 80 90 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
ZXMS6001N3 issue 1 - january 2008 8 www.zetex.com ? zetex semiconductors plc 2008 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1 2 3 -20 0 20 40 60 80 100120140160 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 6v 5v 3v 4v typical output characteristic t = 25c v in i d drain current (a) v ds drain-source voltage (v) current limit inactive current limit active r d = 22 ? r in = 25 ? v ds v in switching speed voltage (v) time (s) threshold voltage vs temperature v in = v ds i d = 1ma normalised v in(th) t j junction temperature (c) on-resistance vs input voltage t j = 25c i d = 0.7a r ds(on) on-resistance ( ? ) v in input voltage (v) t j = 150c t j = 25c source-drain diode forward voltage v sd diode forward voltage (v) i s source current (a) v in = 5v i d = 0.7a on-state resistance vs temperature r ds(on) on-resistance (m ? ) t j junction temperature (c)
ZXMS6001N3 issue 1 - january 2008 9 www.zetex.com ? zetex semiconductors plc 2008 package outline - sot223 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. min. max. a - 1.80 - 0.071 d 6.30 6.70 0.248 0.264 a1 0.02 0.10 0.0008 0.004 e 2.30 bsc 0.0905 bsc a2 1.55 1.65 0.0610 0.0649 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 -
ZXMS6001N3 issue 1 - january 2008 10 www.zetex.com ? zetex semiconductors plc 2008 zetex sales offices europe zetex gmbh kustermann-park balanstra?e 59 d-81541 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com ? 2008 published by zetex semiconductors plc definitions product change zetex semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. customers are solely responsible for obtaining th e latest relevant information before placing orders. applications disclaimer the circuits in this design/application note are offered as desi gn ideas. it is the responsibility of the user to ensure that t he circuit is fit for the user?s application and meets with the user?s requirements. no representation or warranty is given and no liability whatsoev er is assumed by zetex with respect to the accuracy or use of such in formation, or infringement of patents or other intellectual prop erty rights arising from such use or otherwise. zetex does not assume any le gal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restricti on or otherwise) for any damages, loss of profit, business, con tract, opportunity or consequential loss in the use of th ese circuit applications, under any circumstances. life support zetex products are specifically not authorized for use as critic al components in life support devices or systems without the ex press written approval of the chief executive officer of zetex semiconductors plc. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in t he labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devi ce or system whose failure to pe rform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. reproduction the product specifications contained in this publication are issu ed to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the pr oducts or services concerned. terms and conditions all products are sold subjects to zetex? terms and conditions of sale, and this disclaimer (save in the event of a conflict bet ween the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. for the latest information on technology, delivery terms and condi tions and prices, please contact your nearest zetex sales off ice. quality of product zetex is an iso 9001 and ts16949 certified semiconductor manufacturer. to ensure quality of service and products we strongly advise the purchase of parts dire ctly from zetex semiconductors or one of our regionally authorized distributors. for a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork zetex semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. esd (electrostatic discharge) semiconductor devices are susceptible to damage by esd. suitab le precautions should be taken when handling and transporting dev ices. the possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. the extent of damage can vary from immediate functional or parametric malfunc tion to degradation of function or performance in use over ti me. devices suspected of being affected should be replaced. green compliance zetex semiconductors is committed to environ mental excellence in all aspects of its op erations which includes meeting or exceed ing reg- ulatory requirements with respect to the use of hazardous substances. numerous successful programs have been implemented to red uce the use of hazardous substances and/or emissions. all zetex components are compliant with the ro hs directive, and through this it is supporting its customers in their compliance with weee and elv directives. product status key: ?preview? future device intended for production at some point. samples may be available ?active? product status recommended for new designs ?last time buy (ltb)? device will be discontinued and last time buy period and delivery is in effect ?not recommended for new designs? device is still in production to support existing designs and production ?obsolete? production ha s been discontinued datasheet status key: ?draft version? this term denotes a very early datasheet ver sion and contains highly provisional information, which may change in any manner without notice. ?provisional version? this term denotes a pre-release datasheet. it provides a clear indication of anticipated performance. however, changes to the test conditions and specif ications may occur, at any time and without notice. ?issue? this term denotes an issued datasheet cont aining finalized specifications. however, changes to specifications may occur, at any time and without notice.
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